symbol v ds v gs i dm i ar e ar t j ,t stg symbol typ max 31 40 59 75 r q jl 16 24 a repetitiveavalancheenergy0.3mh b 135 mj maximumjunctiontolead c steadystate c/w thermal characteristics parameter units maximumjunctiontoambient a t10s r q ja c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 pulseddraincurrent b powerdissipation t a =25c gatesourcevoltage drainsourcevoltage maximumjunctiontoambient a steadystate 18 15 80 avalanchecurrent b 30 continuousdrain current af maximum units parameter t a =25c t a =70c 30 w junctionandstoragetemperaturerange a p d c 3 2.1 55to150 t a =70c i d AO4430 n-channel enhancement mode field effect transistor features v ds (v)=30v i d =18a(v gs =10v) r ds(on) <5.5m w (v gs =10v) r ds(on) <7.5m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theAO4430/lusesadvancedtrenchtechnologytoprovide excellentr ds(on) ,shootthroughimmunity,bodydiode characteristicsandultralowgateresistance.thisdeviceis ideallysuitedforuseasalowsideswitchinnotebookcpu corepowerconversion. AO4430andAO4430lareelectricallyidentical. rohscompliant AO4430lishalogenfree g d s soic-8 g s d alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4430 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 2.5 v i d(on) 80 a 4.7 5.5 t j =125c 6.5 8 6.2 7.5 m w g fs 82 s v sd 0.7 1 v i s 4.5 a c iss 4660 6060 7270 pf c oss 425 638 960 pf c rss 240 355 530 pf r g 0.2 0.45 0.9 w q g (10v) 80 103 124 nc q g (4.5v) 37 48 58 nc q gs 18 nc q gd 15 nc t d(on) 12 16 ns t r 8 12 ns t d(off) 51.5 70 ns t f 8.8 14 ns t rr 33.5 44 ns q rr 22 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =15a i s =1a,v gs =0v v ds =5v, i d =18a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =18a a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev5: nov 20 08 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4430 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2.5v 3.0v 10v 3.5v 4.5v 0 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d (a) 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 80 100 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 4 8 12 16 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =18a 25c 125c i d =18a alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4430 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 120 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z q q q q j a normalized transient t hermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =18a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4430 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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